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Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

Ionel Stavarache1, Ana-Maria Lepadatu1, Valentin Serban Teodorescu1, Magdalena Lidia Ciurea1*, Vladimir Iancu2, Mircea Dragoman3, George Konstantinidis4 and Raluca Buiculescu5

Author affiliations

1 National Institute of Materials Physics, Magurele 077125, Romania

2 "Politehnica" University of Bucharest, Bucharest 060042, Romania

3 National Institute for Research and Development in Microtechnologies, Bucharest 023573, Romania

4 Institute of Electronic Structures and Laser, Foundation for Research and Technology-Hellas, Heraklion 70013, Crete, Greece

5 University of Crete, Voutes Campus, Heraklion 71003, Crete, Greece

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Citation and License

Nanoscale Research Letters 2011, 6:88  doi:10.1186/1556-276X-6-88

Published: 17 January 2011


The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.