Figure 4.

(a) AFM image (1 × 1 μm2) from the Ge0.96Sn0.04 film with 1.58 nm thickness, grown at 350°C. (b) The dependence of quantity ND on the lateral size.

Mashanov et al. Nanoscale Research Letters 2011 6:85   doi:10.1186/1556-276X-6-85
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