Figure 3.

(a) STM image (200 × 200 nm2) from the Ge0.96Sn0.04 film with 1.08 nm thickness, grown at 250°C. (b) The dependence of quantity ND on the lateral size.

Mashanov et al. Nanoscale Research Letters 2011 6:85   doi:10.1186/1556-276X-6-85
Download authors' original image