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Open Access Nano Express

Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells

Masafumi Jo*, Guotao Duan, Takaaki Mano and Kazuaki Sakoda

Author Affiliations

National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

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Nanoscale Research Letters 2011, 6:76  doi:10.1186/1556-276X-6-76

Published: 12 January 2011

Abstract

We study the effects of low-temperature capping (200-450°C) on the optical properties of GaAs/AlGaAs quantum wells. Photoluminescence measurements clearly show the formation of abundant nonradiative recombination centers in an AlGaAs capping layer grown at 200°C, while there is a slight degradation of the optical quality in AlGaAs capping layers grown at temperatures above 350°C compared to that of a high-temperature capping layer. In addition, the optical quality can be restored by post-growth annealing without any structural change, except for the 200°C-capped sample.