Figure 5.

Transfer characteristics of fabricated multi-channel GaAs nanowire MISFETs with 30 nm SiNx gate dielectric. The drain-source voltage is 2 V. a grown without dopant supply, b grown under supply of DitBuSi (IV/III = 0.52), c grown under supply of TESn (IV/III = 0.08). Typical p-channel behavior is observable for a, b while c proves the n-channel behavior of the TESn-doped sample.

Gutsche et al. Nanoscale Res Lett 2011 6:65   doi:10.1007/s11671-010-9815-7