Top: SEM image of a GaAs nanowire from sample c connected to two electrodes for electrical measurements. The contact spacing is 1.3 μm. Bottom: I-V characteristics of the untapered GaAs nanowires grown at 400°C: a grown without dopant supply, b grown under supply of DitBuSi (IV/III = 0.52), c grown under supply of TESn (IV/III = 0.08). The second inset shows the I–V curves of a and b in a more adequate current scale.
Gutsche et al. Nanoscale Res Lett 2011 6:65 doi:10.1007/s11671-010-9815-7