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A high-performance quantum dot superluminescent diode with a two-section structure

Xinkun Li, Peng Jin*, Qi An, Zuocai Wang, Xueqin Lv, Heng Wei, Jian Wu, Ju Wu and Zhanguo Wang

Author Affiliations

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China

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Nanoscale Research Letters 2011, 6:625  doi:10.1186/1556-276X-6-625

Published: 12 December 2011


Based on InAs/GaAs quantum dots [QDs], a high-power and broadband superluminescent diode [SLD] is achieved by monolithically integrating a conventional SLD with a semiconductor optical amplifier. The two-section QD-SLD device exhibits a high output power above 500 mW with a broad emission spectrum of 86 nm. By properly controlling the current injection in the two sections of the QD-SLD device, the output power of the SLD can be tuned over a wide range from 200 to 500 mW while preserving a broad emission spectrum based on the balance between the ground state emission and the first excited state emission of QDs. The gain process of the two-section QD-SLD with different pumping levels in the two sections is investigated.

quantum dot; superluminescent diode; two-section structure; optical amplification