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Transport and infrared photoresponse properties of InN nanorods/Si heterojunction

Mahesh Kumar12, Thirumaleshwara N Bhat1, Mohana K Rajpalke1, Basanta Roul12, Ajit T Kalghatgi2 and S B Krupanidhi1*

Author Affiliations

1 Materials Research Centre, Indian Institute of Science, Bangalore 560012, India

2 Central Research Laboratory, Bharat Electronics, Bangalore 560013, India

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Nanoscale Research Letters 2011, 6:609  doi:10.1186/1556-276X-6-609

Published: 28 November 2011

Abstract

The present work explores the electrical transport and infrared (IR) photoresponse properties of InN nanorods (NRs)/n-Si heterojunction grown by plasma-assisted molecular beam epitaxy. Single-crystalline wurtzite structure of InN NRs is verified by the X-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN NRs have sharp peaks E2(high) at 490.2 cm-1 and A1(LO) at 591 cm-1. The current transport mechanism of the NRs is limited by three types of mechanisms depending on applied bias voltages. The electrical transport properties of the device were studied in the range of 80 to 450 K. The faster rise and decay time indicate that the InN NRs/n-Si heterojunction is highly sensitive to IR light.