Figure 5.

I-V asymmetry dependence with an AlAs barrier thickness of 1.6 ~ 2.73 nm. I-V asymmetry dependence with an AlAs barrier thickness of 1.6 ~ 2.73 nm and an interruption time of 40 s at the AlAs/In0.53Ga0.47As interfaces.

Zhang et al. Nanoscale Research Letters 2011 6:603   doi:10.1186/1556-276X-6-603
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