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Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes

Yang Zhang12*, Min Guan2, Xingfang Liu2 and Yiping Zeng2

Author Affiliations

1 Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China

2 Material Science Center, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, People's Republic of China

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Nanoscale Research Letters 2011, 6:603  doi:10.1186/1556-276X-6-603

Published: 23 November 2011


The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

resonant tunneling diode; I-V characteristics; molecular beam epitaxy