SEM images of GaSb under different ion beam irradiation fluences. a GaSb irradiated with Ga+ ions to a fluence of 5.2 × 1015 cm-2 under normal bombardment. Only individual voids form at low dose. b GaSb irradiated with Ga+ ions to a fluence of 1.1 × 1016 cm-2 under normal bombardment. Fiber networks form at higher doses.
Zhou et al. Nanoscale Res Lett 2011 6:6 doi:10.1007/s11671-010-9739-2