Open Access Nano Idea

Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

Xianwen Sun, Guoqiang Li, Li Chen, Zihong Shi and Weifeng Zhang*

Author Affiliations

Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China

For all author emails, please log on.

Nanoscale Research Letters 2011, 6:599  doi:10.1186/1556-276X-6-599

Published: 23 November 2011

Abstract

Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.

Keywords:
Au/SrTiO3/Ti; bipolar resistance switching; Schottky barrier