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Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

Xianwen Sun, Guoqiang Li, Li Chen, Zihong Shi and Weifeng Zhang*

Author Affiliations

Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China

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Nanoscale Research Letters 2011, 6:599  doi:10.1186/1556-276X-6-599

Published: 23 November 2011


Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.

Au/SrTiO3/Ti; bipolar resistance switching; Schottky barrier