Figure 1.

AFM image (2 × 2 μm 2) of a the as-grown SiGe QDs, b the Si capping layer grown at 300°C with a thickness of 50 nm. c the Si capping layer after in-situ annealing at 640°C for 10 min. d Cross-sectional TEM image of the sample shown in (c).

Cui et al. Nanoscale Res Lett 2011 6:59   doi:10.1007/s11671-010-9811-y