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Resolution: standard / high Figure 1.
AFM image (2 × 2 μm 2) of a the as-grown SiGe QDs, b the Si capping layer grown at 300°C with a thickness
of 50 nm. c the Si capping layer after in-situ annealing at 640°C for 10 min. d Cross-sectional TEM image of the sample shown in (c).
Cui et al. Nanoscale Res Lett 2011 6:59 doi:10.1007/s11671-010-9811-y |
