Table 4 |
|
|
Variables used in the MD simulation model |
|
|
Dimensions of SiC workpiece |
14.2624 × 4.6353 × 5.4845 nm |
|
Numbers of β-SiC atoms in the workpiece |
38,324 |
|
Numbers of carbon atoms in the cutting tool |
27,373 |
|
Tool nose radius |
2.2974 nm |
|
Undeformed chip thickness |
1.3128 nm |
|
Tool rake and clearance angle |
-25° and 10° |
|
Workpiece machining surface |
(010) |
|
Tool orientation and cutting direction |
Cubic and <100> |
|
Equilibration temperature |
300 K |
|
Cutting velocity |
100 m/s |
|
Timestep |
0.5 fs |
|
|
|
|
Goel et al. Nanoscale Research Letters 2011 6:589 doi:10.1186/1556-276X-6-589 |
|