High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy
1 Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou Industrial Park, Ruoshui Road 398, Suzhou, China
2 Advanced Material Laboratories, Sony Corporation, Atsugi Tec. 4-14-1 Asahi-cho, Atsugi-shi, Kanagawa, 243-0014 Japan
Nanoscale Research Letters 2011, 6:576 doi:10.1186/1556-276X-6-576Published: 31 October 2011
We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell.