Characterization upon electrical hysteresis and thermal diffusion of TiAl3O x dielectric film
1 Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, PR China
2 National Laboratory of Solid State Microstructures, Nanjing University, Hankou Road 22, Nanjing, 210093, People's Republic of PR China
Nanoscale Research Letters 2011, 6:557 doi:10.1186/1556-276X-6-557Published: 19 October 2011
In this paper, we have investigated the electrical properties of TiAl3Ox film as electrical gate insulator deposited by pulsed laser deposition and presented a simple method to describe the thermal diffusion behaviors of metal atoms at TiAl3Ox/Si interfacial region in detail. The TiAl3Ox films show obvious electrical hysteresis by the capacitance-voltage measurements after post-annealing treatment. By virtue of the diffusion models composed of TiAl3Ox film and silicon, the diffusion coefficient and the diffusion activation energy of the Ti and Al atoms are extracted. It is valuable to further investigate the pseudobinary oxide system in practice.
PACS: 77.55.-g; 81.15.Fg; 81.40.Gh.