Figure 2.

An AFM images displaying the oxide lines. Formed at (a) p-type GaAs(100), (b) n-type GaAs(100), (c) p-type GaAs(711), and (d) n-type GaAs(711) with varying loading forces of 60, 120, and 180 nN and applying tip voltage of 5 V.

Ahn et al. Nanoscale Research Letters 2011 6:550   doi:10.1186/1556-276X-6-550
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