|
Resolution: standard / high Figure 2.
An AFM images displaying the oxide lines. Formed at (a) p-type GaAs(100), (b) n-type GaAs(100), (c) p-type GaAs(711), and (d) n-type GaAs(711) with varying loading forces of 60, 120, and 180 nN and applying
tip voltage of 5 V.
Ahn et al. Nanoscale Research Letters 2011 6:550 doi:10.1186/1556-276X-6-550 |
