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Nano-structure fabrication of GaAs using AFM tip-induced local oxidation method: different doping types and plane orientations

Jung-Joon Ahn1, Kyoung-Sook Moon2 and Sang-Mo Koo1*

Author affiliations

1 Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, South Korea

2 Department of Mathematics and Information, Kyungwon University, Seongnam 461-701, South Korea

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Citation and License

Nanoscale Research Letters 2011, 6:550  doi:10.1186/1556-276X-6-550

Published: 6 October 2011


In this study, we have fabricated nano-scaled oxide structures on GaAs substrates that are doped in different conductivity types of p- and n-types and plane orientations of GaAs(100) and GaAs(711), respectively, using an atomic force microscopy (AFM) tip-induced local oxidation method. The AFM-induced GaAs oxide patterns were obtained by varying applied bias from approximately 5 V to approximately 15 V and the tip loading forces from 60 to 180 nN. During the local oxidation, the humidity and the tip scan speed are fixed to approximately 45% and approximately 6.3 μm/s, respectively. The local oxidation rate is further improved in p-type GaAs compared to n-type GaAs substrates whereas the rate is enhanced in GaAs(100) compared to and GaAs(711), respectively, under the identical conditions. In addition, the oxide formation mechanisms in different doping types and plane orientations were investigated and compared with two-dimensional simulation results.