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Selective formation of tungsten nanowires

Daniel CS Bien*, Rahimah Mohd Saman, Siti Aishah Mohamad Badaruddin and Hing Wah Lee

Author Affiliations

Nanoelectronics Cluster, MIMOS Berhad, Technology Park Malaysia, 57000 Kuala Lumpur, Malaysia

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Nanoscale Research Letters 2011, 6:543  doi:10.1186/1556-276X-6-543

Published: 4 October 2011


We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formation is confined to the polysilicon regions; hence, the nanowires are formed without the need for lithography or for additional processing. The fabricated tungsten nanowires were observed to be perfectly aligned, showing 100% selectivity to polysilicon and can be made to be electrically isolated from one another. The electrical conductivity of the nanowires was characterized to determine the effect of its physical dimensions. The conductivity for the tungsten nanowires were found to be 40% higher when compared to doped polysilicon nanowires of similar dimensions.

tungsten; nanowires; nanostructures; self-aligned; chemical vapor deposition; selective deposition