Electronic transport in fluorinated multi-layer graphene. (a) Resistivity as a function of gate voltage for an annealed fully fluorinated device. (a) Resistivity for the fully fluorinated device plotted against T-1 and T-1/3 at Vg = +50 V. (c) I-V characteristics for multi-layer fluorinated graphene exfoliated from CF0.28 graphite. (d) Resistivity of fluorinated multi-layer graphene (exfoliated from CF0.28) plotted as a function of T-x, where x = 1 for thermally activated transport, x = 1/2 for Efros-Shklovskii VRH and x = 1/3 for 2D Mott VRH.
Withers et al. Nanoscale Research Letters 2011 6:526 doi:10.1186/1556-276X-6-526