Figure 9.

STM images and RHEED patterns of Si:H surfaces obtained as a result of hydrogenation in dilute HF after different heat treatments: a, b, e-h STM empty-state images; a 650°C for 8 min, 57 × 57 nm; b 610°C for 10 min, 41 × 41 nm; c, d corresponding RHEED patterns, E = 10 keV: c [110], d [010]; e 570°C for 20 min, 101 × 101 nm; f 550°C for 30 min, 66 × 66 nm; g 530°C for 35 min, 41 × 41 nm; h 500°C for 35 min, 49 × 49 nm; i, j corresponding RHEED patterns, E = 10 keV: i [110], j [010].

Yuryev and Arapkina Nanoscale Research Letters 2011 6:522   doi:10.1186/1556-276X-6-522
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