Figure 8.

RHEED patterns and STM images of Si:H surfaces obtained as a result of different chemical treatments: a-c after hydrogenation in dilute HF; d-f after hydrogenation in buffered HF + NH4F; RHEED patterns: E = 10 keV, a, d [110] azimuth, b, e [010] azimuth; STM empty-state images: c 100 × 100 nm, Us = +1.9 V, It = 100 pA; f 88 × 88 nm, Us = +2.0 V, It = 100 pA.

Yuryev and Arapkina Nanoscale Research Letters 2011 6:522   doi:10.1186/1556-276X-6-522
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