Figure 3.

STM images of Ge WL on Si(001) at the outset of QD array formation: Tgr = 360°C, a hGe = 4.4 Å, Us = -1.86 V, It = 100 pA, neither hut clusters nor their nuclei are observed; b hGe = 5.1 Å, Us = +1.73 V, It = 150 pA; c Us = +1.80 V, It = 100 pA; d Us = +2.00 V, It = 100 pA. Examples of characteristic features are numbered as follows: nuclei of pyramids (1) and wedges (2) [1 ML high over WL patchs, Figure 1] [20,32], small pyramids (3) and wedges (4) [2 ML high over WL patchs] [18,20,32,49].

Yuryev and Arapkina Nanoscale Research Letters 2011 6:522   doi:10.1186/1556-276X-6-522
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