Figure 2.

Formation of {105} facets from shapeless areas with excess of Ge: STM images of different phases of faceting, Tgr = 650°C, hGe = 5 Å; a a shapeless Ge 'heap' without faceting, 150 × 141 nm; b at the outset of faceting, 64 × 64 nm; c-e after growth stoppage and annealing at the growth temperature; c 72 × 72 nm; d 46 × 46 nm; e 23 × 23 nm.

Yuryev and Arapkina Nanoscale Research Letters 2011 6:522   doi:10.1186/1556-276X-6-522
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