Figure 10.

STM images and RHEED patterns of Si:H surfaces obtained as a result of hydrogenation in NH4F or HF + NH4F solution after different heat treatments: a-c, f STM empty-state images; a NH4F, 650°C for 5 min, 40 × 40 nm; b HF + NH4F, 610°C for 10 min, 56 × 56 nm; c NH4F, 610°C for 10 min, 88 × 87 nm; d, e corresponding RHEED patterns, E = 10 keV: d [110], e [010]; f NH4F, 550°C for 35 min, 60 × 60 nm; g, h corresponding RHEED patterns, E = 10 keV: g [110], h [010].

Yuryev and Arapkina Nanoscale Research Letters 2011 6:522   doi:10.1186/1556-276X-6-522
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