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Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well

Huiqi Ye1, Changcheng Hu12, Gang Wang1, Hongming Zhao1, Haitao Tian1, Xiuwen Zhang3, Wenxin Wang1 and Baoli Liu1*

Author Affiliations

1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China

2 College of Physics, Jilin University, Changchun, 130021, China

3 State Key for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

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Nanoscale Research Letters 2011, 6:520  doi:10.1186/1556-276X-6-520

Published: 2 September 2011


The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/AlxGa1-xAs quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature.

PACS:, 71.70.Ej, 75.75.+a, 72.25.Fe,

quantum beats; spin-orbit coupling; magnetic properties of nanostructures; optical creation of spin polarized