Anisotropic in-plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
1 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, Beijing 100190, China
2 College of Physics, Jilin University, Changchun, 130021, China
3 State Key for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
Nanoscale Research Letters 2011, 6:520 doi:10.1186/1556-276X-6-520Published: 2 September 2011
The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/AlxGa1-xAs quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit coupling plus asymmetric potential gradients. We also exploit the temperature dependence of spin-splitting energy. Both the anisotropy of spin splitting and the in-plane effective g-factor decrease with increasing temperature.
PACS: 78.47.jm, 71.70.Ej, 75.75.+a, 72.25.Fe,