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High degree of polarization of the near-band-edge photoluminescence in ZnO nanowires

Gwenole Jacopin1*, Lorenzo Rigutti1, Andres De Luna Bugallo1, François Henry Julien1, Camilla Baratto2, Elisabetta Comini2, Matteo Ferroni2 and Maria Tchernycheva1

Author Affiliations

1 Institut d'Electronique Fondamentale, Université Paris Sud XI, UMR 8622 CNRS, 91405 Orsay, France

2 CNR-IDASC SENSOR Lab., University of Brescia, Brescia, Italy

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Nanoscale Research Letters 2011, 6:501  doi:10.1186/1556-276X-6-501

Published: 19 August 2011


We investigated the polarization dependence of the near-band-edge photoluminescence in ZnO strain-free nanowires grown by vapor phase technique. The emission is polarized perpendicular to the nanowire axis with a large polarization ratio (as high as 0.84 at 4.2 K and 0.63 at 300 K). The observed polarization ratio is explained in terms of selection rules for excitonic transitions derived from the k·p theory for ZnO. The temperature dependence of the polarization ratio evidences a gradual activation of the XC excitonic transition.

PACS: 78.55.Cr, 77.22.Ej, 81.07.Gf.

zinc oxide; nanowire; photoluminescence; polarization