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Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

K Shi1*, DB Li2*, HP Song1, Y Guo1, J Wang1, XQ Xu1, JM Liu1, AL Yang1, HY Wei1, B Zhang1, SY Yang1, XL Liu1*, QS Zhu1 and ZG Wang1

Author affiliations

1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China

2 Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dong Nan Hu Road, 130033, Changchun, People's Republic of China

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Citation and License

Nanoscale Res Lett 2011, 6:50  doi:10.1007/s11671-010-9796-6

Published: 30 September 2010


Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.

Valence band offset; InN/diamond heterojunction; X-ray photoelectron spectroscopy; Conduction band offset