Open Access Nano Express

III-Nitride grating grown on freestanding HfO2 gratings

Yongjin Wang1*, Tong Wu2, Fangren Hu2, Yoshiaki Kanamori2, Hongbo Zhu1 and Kazuhiro Hane2*

Author Affiliations

1 Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China

2 Department of Nanomechanics, Tohoku University, Sendai 980-8579, Japan

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Nanoscale Research Letters 2011, 6:497  doi:10.1186/1556-276X-6-497

Published: 18 August 2011

Abstract

We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitride material. Grating structures locally change the growth condition and vary indium composition in the InGaN/GaN quantum wells and thus, the photoluminescence spectra of epitaxial III-nitride grating are tuned. Guided mode resonances are experimentally demonstrated in fabricated III-nitride gratings, opening the possibility to achieve the interaction between the excited light and the grating structure through guided mode resonance.

PACS: 78.55.Cr; 81.65.Cf; 81.15.Hi.

Keywords:
InGaN/GaN QWs; fast atom beam etching; molecular beam epitaxy