Figure 7.

Current transient responses of the GaN-Pd-C Schottky diode. Upon alternating exposure to the flow of the gas blend 0.1% H2/N2 and of the air. Transients measured shortly after preparing the diode (1) and later after 3 months (2) are shown The diode was forward biased with the constant voltage of 0.5 V

Zdansky Nanoscale Research Letters 2011 6:490   doi:10.1186/1556-276X-6-490
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