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Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si

Yew Hoong Wong and Kuan Yew Cheong*

Author Affiliations

Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia

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Nanoscale Research Letters 2011, 6:489  doi:10.1186/1556-276X-6-489

Published: 10 August 2011


The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2.

oxidation; sputtered-Zr; nitrous oxide; band alignment; electrical breakdown field