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Resolution: standard / high Figure 4.
Photon-generated electron trapping in donor arrays. (a) Device structure of a back-gated SOI-FET for light illumination measurements.
With VG set on the first observable current peak (b), effects of photon absorption in the
nanoscale channel can be observed as RTS in the time-domain measurements (c).
Moraru et al. Nanoscale Research Letters 2011 6:479 doi:10.1186/1556-276X-6-479 |
