Figure 2.

Single dopants in dopant-rich environment. (a) Device structure of a phosphorus-doped SOI-FET with the channel containing several donors. (b) SEM image of the channel area with an illustration of random donor arrangement. (c) An example of device characteristics with a single isolated first peak, indicating single-electron tunneling via a donor QD even in a donor-rich channel. (d) Zoom in on the first peak (inset: single-electron tunneling via a donor in a donor-rich channel).

Moraru et al. Nanoscale Research Letters 2011 6:479   doi:10.1186/1556-276X-6-479
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