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Atom devices based on single dopants in silicon nanostructures

Daniel Moraru1, Arief Udhiarto1, Miftahul Anwar1, Roland Nowak12, Ryszard Jablonski2, Earfan Hamid1, Juli Cha Tarido1, Takeshi Mizuno1 and Michiharu Tabe1*

Author affiliations

1 Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Nakaku, Hamamatsu, 432-8011, Japan

2 Division of Sensors and Measuring Systems, Warsaw University of Technology, Sw. A Boboli 8, 02-525 Warsaw, Poland

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Citation and License

Nanoscale Research Letters 2011, 6:479  doi:10.1186/1556-276X-6-479

Published: 29 July 2011

Abstract

Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as single-dopant transistors, preliminary memory devices, single-electron turnstile devices and photonic devices, in which electron tunneling mediated by single dopant atoms is the essential transport mechanism. Furthermore, observation of individual dopant potential in the channel by Kelvin probe force microscopy is also presented. These results may pave the way for the development of a new device technology, i.e., single-dopant atom electronics.

Keywords:
single-dopant electronics; single-electron tunneling; double-donor systems; multiple-donor systems; photon; Kelvin probe force microscopy; silicon-on-insulator field-effect transistor