Figure 5.

30 × 40 μm2 optical image of the graphene surface and the corresponding Raman maps of the G band intensity and Raman shift. The intensity of the G band is integrated and normalized by the G band of an HOPG reference sample. A full graphene coverage of the surface is observed with thickness inhomogeneities. FLG are thicker at the step edges (about 11 layers) than in the middle of the terraces (about 5 layers). On the edges we can clearly observed stripes: bright areas on the OM image and red areas on the G band intensity map. On the OM image, we can also see black points that correspond to C-rich graphite pits induced by an increased growth rate due to the presence of crystalline defects. On the G band intensity map, blue points mark the presence of Si clusters where the Raman fingerprint of silicon was observed. Finally, the G band is shifted to higher frequencies indicating that FLG are compressively stressed. This stress is progressively relaxed as FLG are thicker.

Tiberj et al. Nanoscale Research Letters 2011 6:478   doi:10.1186/1556-276X-6-478
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