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Open Access Nano Express

Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application

Zhenkui Shen1, Zhihui Chen1, Qian Lu2, Zhijun Qiu1, Anquan Jiang1, Xinping Qu1, Yifang Chen3* and Ran Liu1*

Author Affiliations

1 ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China

2 Department of Material Science, Fudan University, Shanghai, 200433, China

3 Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, OX11 0QX, UK

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Nanoscale Research Letters 2011, 6:474  doi:10.1186/1556-276X-6-474

Published: 27 July 2011

Abstract

In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.