Nano-embossing technology on ferroelectric thin film Pb(Zr0.3,Ti0.7)O3 for multi-bit storage application
1 ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai, 200433, China
2 Department of Material Science, Fudan University, Shanghai, 200433, China
3 Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire, OX11 0QX, UK
Nanoscale Research Letters 2011, 6:474 doi:10.1186/1556-276X-6-474Published: 27 July 2011
In this work, we apply nano-embossing technique to form a stagger structure in ferroelectric lead zirconate titanate [Pb(Zr0.3, Ti0.7)O3 (PZT)] films and investigate the ferroelectric and electrical characterizations of the embossed and un-embossed regions, respectively, of the same films by using piezoresponse force microscopy (PFM) and Radiant Technologies Precision Material Analyzer. Attributed to the different layer thickness of the patterned ferroelectric thin film, two distinctive coercive voltages have been obtained, thereby, allowing for a single ferroelectric memory cell to contain more than one bit of data.