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Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates

Tianfeng Li13, Yonghai Chen1*, Wen Lei2, Xiaolong Zhou1, Shuai Luo1, Yongzheng Hu1, Lijun Wang1, Tao Yang1 and Zhanguo Wang1

Author Affiliations

1 Key Laboratory of Semiconductor Material Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, People's Republic of China

2 Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia

3 Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China

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Nanoscale Research Letters 2011, 6:463  doi:10.1186/1556-276X-6-463

Published: 21 July 2011


Catalyst-free, vertical array of InAs nanowires (NWs) are grown on Si (111) substrate using MOCVD technique. The as-grown InAs NWs show a zinc-blende crystal structure along a < 111 > direction. It is found that both the density and length of InAs NWs decrease with increasing growth temperatures, while the diameter increases with increasing growth temperature, suggesting that the catalyst-free growth of InAs NWs is governed by the nucleation kinetics. The longitudinal optical and transverse optical (TO) mode of InAs NWs present a phonon frequency slightly lower than those of InAs bulk materials, which are speculated to be caused by the defects in the NWs. A surface optical mode is also observed for the InAs NWs, which shifts to lower wave-numbers when the diameter of NWs is decreased, in agreement with the theory prediction. The carrier concentration is extracted to be 2.25 × 1017 cm-3 from the Raman line shape analysis. A splitting of TO modes is also observed.

PACS: 62.23.Hj; 81.07.Gf; 63.22.Gh; 61.46.Km