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A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

Jingyun Gao, Qing Zhao*, Yanghui Sun, Guo Li, Jingmin Zhang and Dapeng Yu*

Author affiliations

State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, 100871, Beijing, Peoples's Republic of China

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Citation and License

Nanoscale Res Lett 2011, 6:45  doi:10.1007/s11671-010-9805-9

Published: 28 September 2010


We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (PO), with the presence of anti-site P on Zn sites (PZn). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

ZnO; Nanowires; P-doped; Zinc phosphate