InN nanorods prepared with CrN nanoislands by plasma-assisted molecular beam epitaxy
1 Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
2 Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan, Republic of China
3 Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
4 Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China
Nanoscale Research Letters 2011, 6:442 doi:10.1186/1556-276X-6-442Published: 7 July 2011
The authors report the influence of CrN nanoisland inserted on growth of baseball-bat InN nanorods by plasma-assisted molecular beam epitaxy under In-rich conditions. By inserting CrN nanoislands between AlN nucleation layer and the Si (111) substrate, it was found that we could reduce strain form Si by inserting CrN nanoisland, FWHM of the x-ray rocking curve measured from InN nanorods from 3,299 reduced to 2,115 arcsec. It is due to the larger strain from lattice miss-match of the film-like InN structure; however, the strain from lattice miss-match was obvious reduced owing to CrN nanoisland inserted. The TEM images confirmed the CrN structures and In droplets dissociation from InN, by these results, we can speculate the growth mechanism of baseball-bat-like InN nanorods.