Results of the numerical simulation for the spin-filtering device shown in Fig. 1(b). The conductance G± for spin sz = ±1/2 from reservoir S to D1 is shown as a function of gate voltage Vg on the quantum dot. Solid and broken lines indicate G+ and G-, respectively. The height of the tunnel barriers is US = UD1 = UD2 = 0.9EF.
Yokoyama and Eto Nanoscale Research Letters 2011 6:436 doi:10.1186/1556-276X-6-436