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Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE

Cheng-Hung Shih1, Teng-Hsing Huang2, Ralf Schuber3*, Yen-Liang Chen1, Liuwen Chang2, Ikai Lo1, Mitch MC Chou2 and Daniel M Schaadt3

Author Affiliations

1 Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

2 Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

3 Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany

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Nanoscale Research Letters 2011, 6:425  doi:10.1186/1556-276X-6-425

Published: 15 June 2011


We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.