Microstructure of non-polar GaN on LiGaO2 grown by plasma-assisted MBE
1 Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
2 Department of Materials and Opto-electronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
3 Institute for Applied Physics/DFG-Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany
Nanoscale Research Letters 2011, 6:425 doi:10.1186/1556-276X-6-425Published: 15 June 2011
We have investigated the structure of non-polar GaN, both on the M - and A-plane, grown on LiGaO2 by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship and for M -plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the M -plane sample, the density of threading dislocations is around 1 × 1011 cm-2 and the stacking fault density amounts to approximately 2 × 105 cm-1. In the A-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the M -plane sample.