Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics
Department of Electrical Engineering, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701, Korea
Nanoscale Res Lett 2011, 6:41 doi:10.1007/s11671-010-9789-5Published: 28 September 2010
Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.