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Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

Byoungjun Park, Kyoungah Cho, Sungsu Kim and Sangsig Kim*

Author Affiliations

Department of Electrical Engineering, Korea University, 5-1, Anam-dong, Sungbuk-gu, Seoul 136-701, Korea

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Nanoscale Res Lett 2011, 6:41  doi:10.1007/s11671-010-9789-5

Published: 28 September 2010


Nano-floating gate memory devices were fabricated on a flexible plastic substrate by a low-temperature fabrication process. The memory characteristics of ZnO-based thin-film transistors with Al nanoparticles embedded in the gate oxides were investigated in this study. Their electron mobility was found to be 0.18 cm2/V·s and their on/off ratio was in the range of 104–105. The threshold voltages of the programmed and erased states were negligibly changed up to 103 cycles. The flexibility, memory properties, and low-temperature fabrication of the nano-floating gate memory devices described herein suggest that they have potential applications for future flexible integrated electronics.

Nanoparticles; Thin-film transistors; Low temperature; Non-volatile memory; Flexible devices