Figure 6.

TEM-EDS analysis of the HfO2/GaAs pattern. (a) Cross-section TEM image of a 100nm-wide HfO2 mesa stripe and a GaAs trench after nanostructuring. (b) Corresponding EDS elemental maps for O (K), Hf (M), Ga (L), and As (L). The amorphous layer located at the trench bottom surface is constructed of gallium oxide. Hf is concentrated in the mesa stripe and side feet.

Benedicto et al. Nanoscale Research Letters 2011 6:400   doi:10.1186/1556-276X-6-400
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