Figure 1.

Pore fabrication process and EDS analysis of membrane. (a) The schematic showing a cross-section view of the device. It consists of 250 nm thick free-standing SiO2 membrane, in 200 μm thick wafer. The small circle on the top of the membrane depicts a nanopore drilled using FIB. (b) EDS spectrum from SiO2 membrane confirming the presence of only Si and O. TEM micrograph (inset) shows the nanopore in free-standing membrane drilled with FIB.

Asghar et al. Nanoscale Research Letters 2011 6:372   doi:10.1186/1556-276X-6-372
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