A compact model for magnetic tunnel junction (MTJ) switched by thermally assisted Spin transfer torque (TAS + STT)
1 IEF, Université Paris-Sud, 15 Rue Georges Clemenceau, Orsay, 91405, France
2 UMR8622, CNRS, Batiment 220, Campus d'Orsay, 91405, France
Nanoscale Research Letters 2011, 6:368 doi:10.1186/1556-276X-6-368Published: 28 April 2011
Thermally assisted spin transfer torque [TAS + STT] is a new switching approach for magnetic tunnel junction [MTJ] nanopillars that represents the best trade-off between data reliability, power efficiency and density. In this paper, we present a compact model for MTJ switched by this approach, which integrates a number of physical models such as temperature evaluation and STT dynamic switching models. Many experimental parameters are included directly to improve the simulation accuracy. It is programmed in the Verilog-A language and compatible with the standard IC CAD tools, providing an easy parameter configuration interface and allowing high-speed co-simulation of hybrid MTJ/CMOS circuits.