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Freestanding HfO2 grating fabricated by fast atom beam etching

Yongjin Wang12*, Tong Wu2, Yoshiaki Kanamori2 and Kazuhiro Hane2

Author Affiliations

1 Institute of Communication Technology, Nanjing University of Posts and Telecommunications, Nanjing, Jiang-Su 210003, People's Republic of China

2 Department of nanomechanics, Tohoku University, Sendai 980-8579, Japan

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Nanoscale Research Letters 2011, 6:367  doi:10.1186/1556-276X-6-367

Published: 28 April 2011


We report here the fabrication of freestanding HfO2 grating by combining fast atom beam etching (FAB) of HfO2 film with dry etching of silicon substrate. HfO2 film is deposited onto silicon substrate by electron beam evaporator. The grating patterns are then defined by electron beam lithography and transferred to HfO2 film by FAB etching. The silicon substrate beneath the HfO2 grating region is removed to make the HfO2 grating suspend in space. Period- and polarization-dependent optical responses of fabricated HfO2 gratings are experimentally characterized in the reflectance measurements. The simple process is feasible for fabricating freestanding HfO2 grating that is a potential candidate for single layer dielectric reflector.

PACS: 73.40.Ty; 42.70.Qs; 81.65.Cf.

HfO2 film; grating; fast atom beam etching