Figure 7.

Drain characteristics in experiment and theory. (a) Experimental drain characteristics for a nano-transistor with L = 10 nm [4,5]. Our assumption for the LTTis marked with a green dashed line leading to a threshold gate voltage of = 0.15V. (b) Theoretical drain characteristics for l = 10 and u = 0.1 (see Fig. 5a) with the green dashed threshold characteristic at = -0.05.

Wulf et al. Nanoscale Research Letters 2011 6:365   doi:10.1186/1556-276X-6-365
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